Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

粉土界面恒刚度循环剪切试验研究

竖向循环荷载作用下桩土界面的作用机理是研究桩土摩擦疲劳的关键。针对循环荷载作用下桩-粉土界面的剪切性能,使用改进的剪切试验装置在恒刚度条件下进行循环剪切试验,研究循环次数、累积位移和法向刚度对其摩擦疲劳性能、循环后单调剪切性能的影响。试验结果表明,粉土在循环剪切过程中,法向应力和剪应力在初始10个循环内随循环数增加快速衰减,随着循环进行,逐渐趋于稳定;单次循环内在剪切位移方向变化时,土体呈现表现出剪缩-剪胀-剪缩交替现象,总体变形呈现剪缩的趋势;循环荷载作用下,粉土界面的法向应力和剪应力随法向刚度增大衰减速率增大,达到稳定的累积循环位移越小;粉土循环后的单调剪切、法向应力恢复的单调剪切的剪应力比小于首次单调剪切试验值,且法向应力恢复的循环后剪切试验的剪胀程度较小,表明循环剪切过程中界面处粉土颗粒棱角破碎,颗粒变得光滑。在对试验数据分析的基础上,提出了与累积位移、法向刚度和初始应力相关的无量纲累积位移,建立了法向应力和界面摩擦角随累积位移的衰减方程。     

大采高综放工作面强动压端头顶板控制技术

为了解决大采高综放工作面回风侧端头顶板控制问题,针对马道头矿8211工作面的地质情况,通过对回风顺槽超前注浆加固,提高超前支护范围和支护强度,并对回风侧端头三角区煤壁和顶板进行化学浆加固的技术方案,有效控制了顺槽超前区围岩变形和工作面回风侧端头三角区煤壁片帮,保证了工作面端头区顶板安全。     

熵模糊物元分析法在水库正常高水位决策中的应用

基于信息熵理论和模糊物元分析理论,探讨了水库正常高水位的熵模糊物元决策模型.以待选方案与最优方案间的海明贴近度来决策水库正常高水位.在确定评价综合指标信息熵的熵权和专家知识权重的的过程中,充分挖掘待选方案的固有信息和避免个人主观因素的弊端.实例应用表明,该方法有效、可行.     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

砾岩储层精细描述中标准测井资料的应用

克拉玛依油田七区的标准测井资料是指使用标准电极系视电阻率测井、自然电位测井和井径测井,以相同的1:500深度比例尺及相同的横向比例进行测井作业所取得的资料.这种资料本来并不具备定量解释储层孔隙度和含油饱和度的能力,但这种资料占该区测井资料总量的比率高达34%.利用标准电极系视电阻率资料和岩心分析资料建立了视电阻率-岩性图版,利用自然电位减小系数α和岩心孔隙度分析资料φ建立了α-φ图版,根据综合测井资料求出标准测井视电阻率校正系数,进而确定了饱和度计算方程的参数.与相应的综合测井资料计算结果相对比,用该方法得到的孔隙度平均绝对误差及相对误差分别为1.85%和11.88%;含油饱和度平均绝对误差及相对误差分别为9.08%和24.75%.将该方法有选择地应用到该区砾岩储层精细描述研究中,弥补了缺乏综合测井资料无法进行测井储层评价及参数研究的缺陷.     

氢分压对润滑油异构降凝反应的影响

采用石油化工科学研究院开发的RIW润滑油异构降凝催化剂，在固定床微反加氢装置上考察了不同氢分压下正十六烷的转化率和选择性，并以实际油品为原料。在中型加氢装置上进行降凝试验。结果表明，较低的反应温度、较低的氢分压有利于大分子正构烷烃在双功能催化剂上的异构化反应。从产品要求上看，尽管低压有利于生成低倾点的油品，但由于生成了较多的芳烃，影响润滑油基础油的安定性，很难满足API Ⅱ类油或API Ⅲ类油对芳烃含量小于10％的限定指标要求。因此在工业应用时，应该综合考虑异构降凝的反应压力，在相对合理的氢分压下操作。     

现代电子工业Cpk评价中的特殊问题

现代电子工业生产具有许多新的特点，如果不针对具体情况，均采用传统工业生产中广泛使用的常规方法计算其工序能力指数，评价生产工艺水平，将可能导致错误的结论。总结了电子工业生产中工艺参数的典型特点，并讨论了工序能力指数的正确计算方法。     

Analysis and simulations of vibrations of a beam with a slider

A model for vibrations of a beam with a slider is derived, analysed and numerically simulated. It describes a viscoelastic beam that is clamped at one end to a vibrating device, while the other end moves between two stops attached to a slider. The contact is described by the normal compliance or by the Signorini conditions. The existence of weak solutions is established using the theory of set-valued pseudomonotone operators. The model is discretized using fourth-order spatial discretization, the solutions are numerically simulated and their results presented. The dynamics of the vibrations are depicted and so are the noise characteristics of the system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.